absolute maximum ratings symbol parameter value units v ces collector-emitter voltage ( v be = 0 ) 700 v v ceo collector-emitter voltage ( i b = 0 ) 400 v v ebo emitter-base voltage ( i c = 0 ) 9.0 v i c collector current 1.5 a i cm collector peak current ( t p # 5 ms ) 3.0 a i b base current 0.75 a i bm base peak current ( t p # 5 ms ) 1.5 a p c total dissipation at t c = 25 c 40 w t stg storage temperature - 65 ~ 150 c t j max. operating junction temperature 150 c thermal characteristics symbol parameter value units r jc thermal resistance, junction-to-case 3.12 c/w r ja thermal resistance, junction-to-ambient 89 c/w SBR13003A mar, 2006. rev. 0 1/5 c c features very high switching speed (typical 120ns@1.0a) minimum lot-to-lot h fe variation low v ce(sat) (typical 200mv@1.0a/0.25a) wide reverse bias s.o.a general description this devices is designed for high voltage, high speed switch- ing characteristic required such as lighting system, switching regulator, inverter and deflection circuit. high voltage fast-switching npn power transistor 2.collector 3.emitter 1.base symbol ? ? ? to-126 1 2 3 semiwell semiconductor
electrical characteristics ( t c = 25 c unless otherwise noted ) symbol parameter condition min typ max units i cev collector cut-off current ( v be = - 1.5v ) v ce = 700v v ce = 700v t c = 100 c - - 1.0 5.0 ma v ceo(sus) collector-emitter sustaining voltage ( i b = 0 ) i c = 10 ma 400 -- v v ce(sat) collector-emitter saturation voltage i c = 0.5a i b = 0.1a i c = 1.0a i b = 0.25a i c = 1.5a i b = 0.5a - - 0.3 0.5 1.0 v v be(sat) base-emitter saturation voltage i c = 0.5a i b = 0.1a i c = 1.0a i b = 0.25a -- 1.0 1.2 v h fe dc current gain i c = 0.5a v ce = 2v i c = 1.0a v ce = 2v 10 5 - 30 25 t on t s t f resistive load turn-on time storage time fall time i c = 1.0a v cc = 125v i b1 = 0.2a i b2 = - 0.2a t p = 25 k - 0.2 1.5 0.15 1.0 3.0 0.4 k t s t f inductive load storage time fall time v cc = 15v i c = 1.0a i b1 = 0.2a i b2 = -0.5a l = 0.35mh v clamp = 300v - 2.0 0.12 4.0 0.3 k t s t f inductive load storage time fall time v cc = 15v i c = 1.0a i b1 = 0.2a i b2 = -0.5a l = 0.35mh v clamp = 300v t c = 100 c - 2.4 0.15 5.0 0.4 k SBR13003A 2/5 ? notes : pulse test : pulse width ? 300 k , duty cycle ? 2% SBR13003A-1 hfe 13-20(ic = 0.5a v ce = 2v) SBR13003A-2 hfe 18-26(ic = 0.5a v ce = 2v)
0 .01 0.1 1 10 0. 1 1 10 10 0 v ce =2v ' j h % $ $ 6 3 3 & / 5 ( " * / * d < " >
$ 0 - - & $ 5 0 3 $ 6 3 3 & / 5 i ' &
% $ $ 6 3 3 & / 5 ( " * / 0 .01 0.1 1 10 0.01 0.1 1 10 v ce (sat) v be (sat) ic=4i b ' j h 4 " 5 6 3 " 5 * 0 / 7 0 - 5 " ( & * d < " >
$ 0 - - & $ 5 0 3 $ 6 3 3 & / 5 7 # & 4
7 $ & 4
< 7 >
4 " 5 6 3 " 5 * 0 / 7 0 - 5 " ( & 0.1 1 0.01 0.1 1 10 vcc=125v ic=5i b tf tstg ' j h 4 8 * $ ) * / ( 5 * . & * d < " >
$ 0 - - & $ 5 0 3 $ 6 3 3 & / 5 u t
u g < k >
5 * . & 1 10 100 1000 0.0 1 0. 1 1 10 1 0 u s 1 0 0 u s 1 m s icmax(pulse) icmax(dc) ' j h 4 " ' & 0 1 & 3 " 5 * / ( " 3 & " 7 $ & < 7 >
$ 0 - - & $ 5 0 3 & . * 5 5 & 3 7 0 - 5 " ( & * d < " >
$ 0 - - & $ 5 0 3 $ 6 3 3 & / 0 50 100 150 200 0 10 20 30 40 50 ' j h 1 0 8 & 3 % & 3 " 5 * / ( SBR13003A 3/5
i b1 v be (o ff) r bb i b i c v clamp v cc v ce d.u.t l c f i b1 v be (o ff) r bb i b i c v cc v ce d.u.t r c SBR13003A 4/5 inductive load switching & rbsoa test circuit resistive load switching test circuit
dim. mm inch min. typ. max. min. typ. max. a 7.5 7.9 0.295 0.311 b 10.8 11.2 0.425 0.441 c 14.2 14.7 0.559 0.579 d 2.7 2.9 0.106 0.114 e 3.8 0.150 f 2.5 0.098 g 1.2 1.5 0.047 0.059 h 2.3 0.091 i 4.6 0.181 j 0.48 0.62 0.019 0.024 k 0.7 0.86 0.028 0.034 l 1.4 0.055 3.2 0.126 SBR13003A to-126 package dimension 5/5 1. base 2. collector 3. emitter a b c d e f g 3 2 1 h i j k l
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